any changing of specification will not be informed individual MMBT2222A npn silicon general purpose transistor maximum ratings rating symbol 2222 2222a unit collector emitter voltage v ceo 30 40 vdc collector base voltage v cbo 60 75 vdc emitter base voltage v ebo 5.0 6.0 vdc collector current e continuous i c 600 madc thermal characteristics characteristic symbol max unit total device dissipation fr 5 board (1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg 55 to +150 c device marking mmbt2222 = m1b; MMBT2222A = 1p electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector emitter breakdown voltage (i c = 10 madc, i b = 0) mmbt2222 MMBT2222A v (br)ceo 30 40 e e vdc collector base breakdown voltage (i c = 10 adc, i e = 0) mmbt2222 MMBT2222A v (br)cbo 60 75 e e vdc emitter base breakdown voltage (i e = 10 adc, i c = 0) mmbt2222 MMBT2222A v (br)ebo 5.0 6.0 e e vdc collector cutoff current (v ce = 60 vdc, v eb(off) = 3.0 vdc) MMBT2222A i cex e 10 nadc collector cutoff current (v cb = 50 vdc, i e = 0) mmbt2222 (v cb = 60 vdc, i e = 0) MMBT2222A (v cb = 50 vdc, i e = 0, t a = 125 c) mmbt2222 (v cb = 60 vdc, i e = 0, t a = 125 c) MMBT2222A i cbo e e e e 0.01 0.01 10 10 m adc emitter cutoff current (v eb = 3.0 vdc, i c = 0) MMBT2222A i ebo e 100 nadc base cutoff current (v ce = 60 vdc, v eb(off) = 3.0 vdc) MMBT2222A i bl e 20 nadc 1 . f r 5 = 1 . 0 0 . 7 5 0 . 0 6 2 i n . 2 . a l u m i n a = 0 . 4 0 . 3 0 . 0 2 4 i n . 9 9 . 5 % a l u m i n a . r e m : t h e r m a l c l a d i s a t r a d e m a r k o f t h e b e r g q u i s t c o m p a n y . epitaxial planar die construction complementary pnp type available (mmbt2907a) ideal for medium power amplification and switching features x x x x h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e 01 -jun-2002 rev. a page 1 of 5 collector 3 1 base 2 emitter k j c h l a b s g v 3 1 2 d top view 1 2 3 dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 rohs compliant product a suffix of "-c" specifies halogen & lead-free
any changing of specification will not be informed individual MMBT2222A npn silicon general purpose transistor electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain (i c = 0.1 madc, v ce = 10 vdc) (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc, t a = 55 c) MMBT2222A only (i c = 150 madc, v ce = 10 vdc) (3) (i c = 150 madc, v ce = 1.0 vdc) (3) (i c = 500 madc, v ce = 10 vdc) (3) mmbt2222 MMBT2222A h fe 35 50 75 35 100 50 30 40 e e e e 300 e e e e collector emitter saturation voltage (3) (i c = 150 madc, i b = 15 madc) mmbt2222 MMBT2222A (i c = 500 madc, i b = 50 madc) mmbt2222 MMBT2222A v ce(sat) e e e e 0.4 0.3 1.6 1.0 vdc base emitter saturation voltage (3) (i c = 150 madc, i b = 15 madc) mmbt2222 MMBT2222A (i c = 500 madc, i b = 50 madc) mmbt2222 MMBT2222A v be(sat) e 0.6 e e 1.3 1.2 2.6 2.0 vdc small signal characteristics current gain e bandwidth product (4) (i c = 20 madc, v ce = 20 vdc, f = 100 mhz) mmbt2222 MMBT2222A f t 250 300 e e mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo e 8.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) mmbt2222 MMBT2222A c ibo e e 30 25 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) MMBT2222A (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) MMBT2222A h ie 2.0 0.25 8.0 1.25 k w voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) MMBT2222A (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) MMBT2222A h re e e 8.0 4.0 x 10 4 small signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) MMBT2222A (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) MMBT2222A h fe 50 75 300 375 e output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) MMBT2222A (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) MMBT2222A h oe 5.0 25 35 200 mhos collector base time constant (i e = 20 madc, v cb = 20 vdc, f = 31.8 mhz) MMBT2222A rb, c c e 150 ps noise figure (i c = 100 adc, v ce = 10 vdc, r s = 1.0 k w , f = 1.0 khz) MMBT2222A nf e 4.0 db switching characteristics (MMBT2222A only) delay time (v cc = 30 vdc, v be(off) = 0.5 vdc, t d e 10 ns rise time ( cc , be(off) , i c = 150 madc, i b1 = 15 madc) t r e 25 ns storage time (v cc = 30 vdc, i c = 150 madc, t s e 225 ns fall time ( cc , c , i b1 = i b2 = 15 madc) t f e 60 ns 3. pulse test: pulse width 300 s, duty cycle 2.0%. 4. f t is defined as the frequency at which |h fe | extrapolates to unity. http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 2 of 5
any changing of specification will not be informed individual MMBT2222A npn silicon general purpose transistor figure 1. turnon time figure 2. turnoff time switching time equivalent test circuits scope rise time < 4 ns *total shunt capacitance of test jig, connectors, and oscilloscope. +16 v 2 v < 2 ns 0 1.0 to 100 m s, d uty c ycle 2.0% 1 k w + 30 v 200 c s * < 10 pf +16 v 14 v 0 < 20 ns 1.0 to 100 m s, d uty c ycle 2.0% 1 k + 30 v 200 c s * < 10 pf 4 v 1n914 1000 10 20 30 50 70 100 200 300 500 700 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 i c , c ollector c urrent (ma) figure 3. dc current gain h f e , dc c urrent g ain v c e , c ollector e mitter v oltage (v) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 i b , b ase c urrent (ma) figure 4. collector saturation region http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 3 of 5
any changing of specification will not be informed individual MMBT2222A npn silicon general purpose transistor figure 5. turn on time i c , c ollector c urrent (ma) 70 100 200 50 t, t ime (ns) 10 20 70 5.0 100 5.0 7.0 30 50 200 10 30 7.0 20 i c /i b = 10 t j = 25 c t r @ v cc = 30 v t d @ v eb(off) = 2.0 v t d @ v eb(off) = 0 3.0 2.0 300 500 500 t, t ime (ns) 5.0 7.0 10 20 30 50 70 100 200 300 figure 6. t ur n off t ime i c , collector current (ma) 10 20 70 1005.0 7.0 30 50 200 300 500 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s = t s 1/8 t f t f figure 7. frequency effects f, f requency (khz) 4.0 6.0 8.0 10 2.0 0.1 figure 8. source resistance effects r s , s ource r esistance (ohms) n f , n oise f igure (db) 1.0 2.0 5.0 10 20 50 0.2 0.5 0 100 n f , n oise f igure (db) 0.01 0.02 0.05 r s = optimum r s = source r s = resistance i c = 1.0 ma, r s = 150 w 500 m a, r s = 200 w 100 m a, r s = 2.0 k w 50 m a, r s = 4.0 k w f = 1.0 khz i c = 50 m a 100 m a 500 m a 1.0 ma 4.0 6.0 8.0 10 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k figure 9. capacitances r everse v oltage (v) 3.0 5.0 7.0 10 2.0 0.1 c apacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.2 0.3 0.5 0.7 c cb 20 30 c eb figure 10. currentgain bandwidth product i c , c ollector c urrent (ma) 70 100 200 300 50 500 f t , c urrent g ain b andwidth p roducts (mhz) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 v ce = 20 v t j = 25 c http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 4 of 5
any changing of specification will not be informed individual MMBT2222A npn silicon general purpose transistor figure 11. aono voltages i c , collect current (ma) 0.4 0.6 0.8 1.0 0.2 v , v oltage (v) 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v figure 12. temperature coefficients i c , c ollect c urrent (ma) 0.5 0 +0.5 c oefficient (mv/ c) 1.0 1.5 2.5 r vc for v ce(sat) r vb for v be 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500 1.0 k 1.0 v 2.0 0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500 http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 5 of 5
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